Intel FC80486DX4-75
Specifications
Tools
Intel 80486 75 MHz specifications
| General information | ||||||||||||||||
| Type | CPU / Microprocessor | |||||||||||||||
| Family | Intel 80486 | |||||||||||||||
| CPU part number | FC80486DX4-75 is an OEM/tray microprocessor | |||||||||||||||
| Frequency ? | 75 MHz | |||||||||||||||
| Bus speed ? | 25 MHz | |||||||||||||||
| Clock multiplier ? | 3 | |||||||||||||||
| Package | 208-pin SQFP 1.2" x 1.2" (3.06 cm x 3.06 cm) | |||||||||||||||
| S-spec numbers | ||||||||||||||||
| ||||||||||||||||
| Architecture / Microarchitecture | ||||||||||||||||
| Microarchitecture | i486 | |||||||||||||||
| Data width | 32 bit | |||||||||||||||
| Floating Point Unit | Integrated | |||||||||||||||
| Level 1 cache size ? | 16 KB 4-way set associative unified code and data cache | |||||||||||||||
| Physical memory | 4 GB | |||||||||||||||
| Virtual memory | 64 TB | |||||||||||||||
| Low power features |
| |||||||||||||||
| On-chip peripherals | Memory management unit | |||||||||||||||
| Electrical / Thermal parameters | ||||||||||||||||
| V core ? | 3.3V ± 0.3V | |||||||||||||||
| Minimum/Maximum operating temperature ? | 0°C - 85°C | |||||||||||||||
| Minimum/Typical/Maximum power dissipation | 0.25 Watt (Stop Grant mode) / 2.72 Watt / 3.96 Watt | |||||||||||||||
Pictures (3)
| Picture ... | |
Hi, this is an Intel FC80486DX4-75 out of my collection. Greetings from Germany :) |
 |
| FC80486DX4-75 | |
Hi it is a piece of Toshiba T2110 mb. FHVSY2 from My own collection :-) .1995 year 03 week (January). |
 |
| SmartDie(TM) Intel DX4 from Intel archive | |
SmartDie(TM) Intel DX4 archive from 272752-1.pdf Die size: 313 x 344 [Mils] or 7.9756 x 8.7376 [mm] =69.6876 mm^2 |
 |
Comments (3)
You're welcome to post suggestions, corrections, your own personal Intel 80486 75 MHz review, or your experience with the microprocessor. Please do not ask upgrade and troubleshooting questions, and do not start discussions.
Technology
CHMOS 0,6 µm (600 nm)
1 600 000 Transistors
Die area 81 mm²(de.wikipedia) or 76 mm² (ru.wikipedia)
Introduction March 1994
Info about 486DX4 from NASA archive
From:
ntrs.nasa.gov archive 19970040588_1997090727.pdf
NASA and Texas A&M University Test Report...
December 30,1996
Intel 486-DX4 Process Characteristics
0.6 µm BiCMOS
3.3V
1 800 000 Transistors
Die area 72.25 mm²
Wafer type P-EPI on P
Well type dual well
Gate Oxide Thickness 80 Angstroms
Min feature size 0.57 µm
Min channel length 0.30 µm
Passivation thickness 4500 Angstroms
Die overcoat material Polyimide
Die overcoat thickness 3.1 µm
Wow this a data (only for NASA)
:-O
SmartDie(TM) Intel DX4 from Intel archive
SmartDie(TM) Intel DX4 archive from 272752-1.pdf
Die size: 313 x 344 [Mils] or 7.9756 x 8.7376 [mm] =69.6876 mm²
Die Revision: A-2
Post-Saw Die Dimensions: Mils: X e 313 ± 0.5, Y e 344 ± 0.5
Die Thickness: 17 ± 1 mils
Minimum Pad Pitch: 118.75 microns (4.7 mils)
Pad Passivation Opening Size: Mils: 3.7 x 3.7 (single pads) Microns: 95 x 95 (single pads)
Bond Pad Metalization: 14,000 Angstroms Al (0.5% Cu), 1000 Angstroms Ti,(outermost layer first) 365 Angstroms TiN
Pads per Die: 249 (places to connect pins)
Die Backside Material: 1600 Angstroms Gold, 150 Angstroms Chrome (outermost layer first)
Passivation: 6.13 microns polyimide, 0.45 microns nitride
(outermost layer first)
Intel Fabrication Process: BiCMOS (min. feature size 0.6 microns)
| Terms and Conditions · Privacy Policy · Contact Us | (c) Copyright 2003 - 2010 Gennadiy Shvets |