| General information |
| Type | CPU / Microprocessor |
| Frequency (MHz) ? | 2 |
| Package | 40-pin side-brazed ceramic DIP |
| Introduction date | April 1974 |
| |
| Architecture / Microarchitecture |
| Manufacturing process | 6 micron N-channel silicon gate MOS technology
4,500 transistors |
| Data width | 8 bit |
| |
| Electrical/Thermal parameters |
| V core (V) ? | 5 ± 10% |
| V I/O or secondary (V) | 12 ± 10% |
| V tertiary (V) | -5 ± 10% |
| Minimum/Maximum operating temperature (°C) ? | -55 - 125 |
| Typical/Maximum power dissipation (W) | 0.9 / 1.61 |
| |
| Notes |
- MIL-STD-883 Class B screening
|
